- Graphene-Semiconductor Heterojunction Photodetector and Method for Manufacturing the Same

摘要

In the graphene-semiconductor heterojunction optoelectronic device and manufacturing method according to the present invention, a source electrode and a test electrode are formed on a graphene layer to face each other, and a drain electrode is formed in a direction perpendicular to the central region of the graphene layer. The drain electrode may be physically separated from the graphene layer. In addition, since charges formed in the central region of the graphene layer are transferred to the drain electrode through the substrate, high photosensitivity can be secured, and a high output voltage can be secured with respect to the applied light. Accordingly, as the drain electrode is formed on the side of the graphene layer, the size of the drain electrode can be easily adjusted, and a high output voltage can be obtained.