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SELECTIVE AREA GROWTH WITH IMPROVED SELECTIVITY FOR NANOWIRES
SELECTIVE AREA GROWTH WITH IMPROVED SELECTIVITY FOR NANOWIRES
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机译:选择性区域增长,改善了纳米线的选择性
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摘要
A nanowire structure includes a substrate, a patterned mask layer, and a nanowire. The patterned mask layer includes an opening through which the substrate is exposed. Further, the patterned mask layer has a thermal conductivity greater than 20(W/m*K). The nanowire is on the substrate in the opening of the patterned mask layer. By providing the patterned mask layer with a thermal conductivity greater than 20(W/m*K), the patterned mask layer is able to maintain a temperature of the surface thereof to a desired level when the nanowire is provided. This prevents undesired parasitic growth on the patterned mask layer, thereby improving the performance of the nanowire structure.
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机译:纳米线结构包括基板,图案化掩模层和纳米线。 图案化的掩模层包括开口,基板曝光。 此外,图案化掩模层的导热率大于20(w / m * k)。 纳米线在图案化掩模层的开口中位于基板上。 通过提供大于20(w / m * k)的导热率的图案化掩模层,当提供纳米线时,图案化掩模层能够将其表面的温度保持在所需水平。 这防止了图案化掩模层上的不希望的寄生生长,从而提高了纳米线结构的性能。
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