SELECTIVE AREA GROWTH WITH IMPROVED SELECTIVITY FOR NANOWIRES

摘要

A nanowire structure includes a substrate, a patterned mask layer, and a nanowire. The patterned mask layer includes an opening through which the substrate is exposed. Further, the patterned mask layer has a thermal conductivity greater than; $$ 20\frac{W}{m*K}.$$ ;The nanowire is on the substrate in the opening of the patterned mask layer. By providing the patterned mask layer with a thermal conductivity greater than; $$ 20\frac{W}{m*K},$$ ;the patterned mask layer is able to maintain a temperature of the surface thereof to a desired level when the nanowire is provided. This prevents undesired parasitic growth on the patterned mask layer, thereby improving the performance of the nanowire structure.