首页> 外国专利> HIGH VOLTAGE TOLERANT CMOS DRIVER FOR LOW-VOLTAGE BI-DIRECTIONAL COMMUNICATION BUSES

HIGH VOLTAGE TOLERANT CMOS DRIVER FOR LOW-VOLTAGE BI-DIRECTIONAL COMMUNICATION BUSES

机译:用于低压双向通信总线的高压容耐CMOS驱动器

摘要

A bi-state driver circuit for switching an output terminal between a first predetermined voltage level and a high impedance state, which involves a first string of transistors connected between the output terminal and the first predetermined voltage level at least a first transistor arranged closer to the first predetermined voltage level, a second transistor arranged closer to the output terminal, a voltage divider circuit connected between the output terminal and a voltage level of a control signal attaining voltage levels between the first predetermined voltage level and a second predetermined voltage level, including at least one intermediate node having an intermediate voltage level between a voltage level of the output terminal and the voltage level of the control signal, and a second string of transistors connected between the intermediate node of the voltage divider circuit and the second predetermined voltage level, and including at least a third transistor.
机译:用于在第一预定电压电平和高阻抗状态之间切换输出端子的双状态驱动电路,这涉及连接在输出端子和第一预定电压电平之间的第一晶体管至少第一晶体管布置在靠近的第一晶体管 第一预定电压电平,布置靠近输出端子的第二晶体管,连接在输出端子和第二预定电压电平之间的电压电平和第二预定电压电平之间的电压水平的分压器电路。 至少一个中间节点,其具有在输出端子的电压电平和控制信号的电压电平之间的中间电压电平,以及连接在分压器电路的中间节点和第二预定电压电平之间的第二串的晶体管。 包括至少第三晶体管。

著录项

  • 公开/公告号EP3311489B1

    专利类型

  • 公开/公告日2021-09-01

    原文格式PDF

  • 申请/专利权人 EUROPEAN SPACE AGENCY;

    申请/专利号EP20150730764

  • 发明设计人 JANSEN RICHARD;LINDNER SCOTT;

    申请日2015-06-18

  • 分类号G06F13/40;H03K19/0185;H03K19/003;

  • 国家 EP

  • 入库时间 2022-08-24 22:23:31

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