SEMICONDUCTOR DEVICE WITH METAL-SEMICONDUCTOR CONTACTS INCLUDING OXYGEN INSERTION LAYER TO CONSTRAIN DOPANTS AND RELATED METHODS

摘要

A semiconductor device may include a semiconductor layer and at least one contact in the semiconductor layer. The contact may include at least one oxygen monolayer constrained within a crystal lattice of adjacent semiconductor portions of the semiconductor layer and spaced apart from a surface of the semiconductor layer by between one and four monolayers, and a metal layer on the surface of the semiconductor layer above the at least one oxygen monolayer. The semiconductor portion between the oxygen monolayer and the metal layer may have a dopant concentration of 1×1021 atoms/cm3 or greater.