Ion implanters, methods of processing ion beams in ion implanters, and low-emission inserts

摘要

ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall surrounding the cavity, the cavity being arranged to conduct the ion beam. Implanter may also include a low release the insert disposed on the inner wall, may further comprise a layer 12 C, 12 C layer has an outer surface facing the cavity.