首页>
外国专利>
PRODUCTION METHOD FOR SILICON CARBIDE SINGLE CRYSTAL
PRODUCTION METHOD FOR SILICON CARBIDE SINGLE CRYSTAL
展开▼
机译:碳化硅单晶的生产方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention provides a method for manufacturing a silicon carbide single crystal by sublimating a solid silicon carbide raw material in a growth container to grow a silicon carbide single crystal on a seed crystal substrate. The method includes: mixing a tantalum (Ta) powder with a carbon powder; attaching the mixture to the solid silicon carbide raw material in the growth container; and heating the resultant for sintering to form a tantalum carbide (TaC) coating film on a surface of the solid silicon carbide raw material. A silicon carbide single crystal is grown after or while the coating film is formed. Thereby, the present invention provides a method for manufacturing a silicon carbide single crystal with few carbon inclusions.
展开▼