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Metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements
Metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements
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机译:金属氧化物半导体场效应 - 晶体管(MOSFET)作为反熔丝元件
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摘要
Embodiments herein may describe techniques for an integrated circuit including a MOSFET having a source area, a channel area, a gate electrode, and a drain area. The channel area may include a first channel region with a dopant of a first concentration next to the source area, and a second channel region with the dopant of a second concentration higher than the first concentration next to the drain area. A source electrode may be in contact with the source area, a gate oxide layer above the channel area, and the gate electrode above the gate oxide layer. A first resistance exists between the source electrode and the gate electrode. A second resistance exists between the source electrode, the gate electrode, and a path through the gate oxide layer to couple the source electrode and the gate electrode after a programming operation is performed. Other embodiments may be described and/or claimed.
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