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Spacer-based patterning for tight-pitch and low-variability random access memory (RAM) bit cells and the resulting structures
Spacer-based patterning for tight-pitch and low-variability random access memory (RAM) bit cells and the resulting structures
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机译:基于间隔的基于间距和低可变性随机存取存储器(RAM)位单元和所产生的结构的垫片图案化
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摘要
Spacer-based patterning for tight-pitch and low-variability random access memory (RAM) bit cells, and the resulting structures, are described. In an example, a semiconductor structure includes a substrate having a top layer. An array of non-volatile random access memory (RAM) bit cells is disposed on the top layer of the substrate. The array of non-volatile RAM bit cells includes columns of non-volatile RAM bit cells along a first direction and rows of non-volatile RAM bit cells along a second direction orthogonal to the first direction. A plurality of recesses is in the top layer of the substrate, along the first direction between columns of the array of non-volatile RAM bit cells.
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