GAN/TWO-DIMENSIONAL AIN HETEROJUNCTION RECTIFIER ON SILICON SUBSTRATE AND PREPARATION METHOD THEREFOR

摘要

A GaN/two-dimensional AIN heterojunction rectifier on a silicon substrate and a preparation method therefor, which belong to the field of rectifiers. The rectifier comprises a silicon substrate (1), a GaN buffer layer (2), a carbon-doped semi-insulating GaN layer (3), a two-dimensional AIN layer (4), a non-doped GaN layer (5), a non-doped InGaN layer (6), and a SiNx passivation layer (7) that are stacked in succession, and further comprises a mesa isolation groove (8) and a Schottky contact electrode (9) that are provided at one side; the mesa isolation groove (8) touches the non-doped GaN layer (5), the non-doped InGaN layer (6), the SiNx passivation layer (7) and the Schottky contact electrode (9), and the Schottky contact electrode (9) touches the mesa isolation groove (8) and the non-doped GaN layer (5). The thickness of the two-dimensional AIN layer (4) is only several atomic layers, thus the received stress and polarization strength are greater than that of AlGaN. Therefore, the heterostructure of GaN/two-dimensional AIN can produce two-dimensional electron gas having an ultra-high concentration and ultra-large mobility, thus greatly increasing the frequency and efficiency.