DIRECT-CURRENT GENERATOR BASED ON DYNAMIC SEMICONDUCTOR HETEROJUNCTION, AND METHOD FOR PREPARING SAME

摘要

A direct-current generator based on dynamic semiconductor heterojunction and a method for manufacturing the same are provided. Direct-current generator includes a first semiconductor layer (1) and a second semiconductor layer (4); a first electrode (2) is provided on back surface of the first semiconductor layer (1), an insulating layer (3) is provided on front surface of the first semiconductor layer (1); a second electrode (5) is provided on a side of the second semiconductor layer (4); front surface of the first semiconductor layer and a bare side of the second semiconductor layer contact each other and are slidable relative to each other to form a dynamic semiconductor heterojunction direct-current generator; materials of the first semiconductor layer (1) and the second semiconductor layer (4) have different Fermi levels. The generator has high current density, and a generating voltage can increase by designing interface energy band and adding the insulating layer.