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Heat resistant container for single domain treatment of oxide single crystal and single domain treatment method of oxide single crystal

机译:用于单结构氧化物单晶的单域处理耐热容器,氧化氧化物单晶

摘要

Problem to be solved: to suppress the defects such as cracking due to contact of the oxide single crystal to the heat-resistant container in the case where the oxide single crystal is placed in the heat resistant container or the extraction of the oxide single crystal from the heat resistant container, and the workability is improved.Heat resistant containerFor an oxide single crystal embedded in an oxide single crystal powderA heat-resistant container for use in a single domain treatment in which single crystals of single crystals are applied by applying a voltage at a predetermined temperatureThe receiving tray with bottom and wallCylindrical.A cylindrical section placed above the tray sectionEquipped withCylindrical sectionAn oxide single crystal and an oxide single crystal powder can be contained inside.The saucerOxide single crystal powderA cylindrical portion holding oxide single crystal and oxide single crystal powder andAndThe outer diameter of the cylinder isSmaller than the inner diameter of the tray.Diagram
机译:要解决的问题:抑制由于氧化物单晶与氧化物单晶放置在耐热容器中的耐热容器中的耐热容器的诸如裂缝的缺陷,例如氧化物单晶的耐热容器耐热容器和可加工性得到改善。嵌入氧化物单晶粉末耐热容器中的氧化物单晶的耐药容器,用于单一域处理,其中通过施加电压施加单晶的单晶的单晶。具有底部和壁桥的预定温度接收托盘。放置在托盘部分上方的圆柱形部分,其中含有曲线型切片片氧化物单晶和氧化物单晶粉末。茶氧化盐单晶粉末圆柱形部分保持氧化物单晶和氧化物单晶粉汽缸的外径比我的外径托盘的直径.diagram

著录项

  • 公开/公告号JP2021172541A

    专利类型

  • 公开/公告日2021-11-01

    原文格式PDF

  • 申请/专利权人 住友金属鉱山株式会社;

    申请/专利号JP20200076008

  • 发明设计人 土橋 大輔;

    申请日2020-04-22

  • 分类号C30B29/30;C30B33/02;C30B33/04;

  • 国家 JP

  • 入库时间 2022-08-24 22:01:09

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