首页>
外国专利>
2-dimensional electron gas and 2-dimensional hole gas junction based semiconductor device
2-dimensional electron gas and 2-dimensional hole gas junction based semiconductor device
展开▼
机译:二维电子气体和二维空燃气结的半导体器件
展开▼
页面导航
摘要
著录项
相似文献
摘要
Semiconductor devices including a first region having a first three Nitride (III-N) layer and a second III-N layer, the second III-N layer is over the first III-N. The second III-N layer has spontaneous polarization less than the first III-N layer, such that a two-dimensional hole gas (2-DHG) will be formed at a junction of the first III-N layer to the second III-N layer. An Anode forms an ohmic contact to the 2-DHG. A second region includes a third III-N layer and a forth III-N layer, such that the fourth III-N layer is over the third III-N. The forth III-N layer has spontaneous polarization greater than the third III-N layer, such that two-dimensional electron gas (2-DEG) will be formed at a junction of the third III-N layer to the forth III-N layer. A Cathode forms an ohmic contact to the 2-DEG. The first and second regions are connected at an interface.
展开▼