Gallium oxide thin film based on sapphire substrate, its growth method, and use

摘要

The present invention discloses a gallium oxide thin film based on a sapphire substrate, its growth method and use.A method of manufacturing a gallium oxide thin film based on the sapphire substrate is one or more of the following α－ Forming (AlxGa1-x) 2O3 (0.99 ≧ x ≧ 0.01) strain buffer layer on the sapphire substrate and the above α－ The method of forming an oxidized gallium epitaxial layer on the (AlxGa1-x) 2O3 buffer buffer layer.According to the growth method according to embodiments of the present invention α－ Ga2O3 and α－ It is possible to solve the technical challenges of the epitaxial growth of Al2O3 and the contradiction of temperature. α－ Effectively decreasing the density of defects in epitaxial Ga2O3 films. α－ The crystalline quality of Ga2O3 epitaxial thin film material can be improved.Diagram