SELECTIVE DEPOSITION OF SILICON OXIDE ON DIELECTRIC SURFACES RELATIVE TO METAL SURFACES

摘要

A method is provided for selectively depositing a silicon oxide film on a dielectric surface relative to a metal surface. The metal surface of the substrate may be selectively passivated to the dielectric surface, for example with a polyimide layer or thiol SAM. By contacting the dielectric surface with a metal catalyst and a silicon precursor comprising silanol, silicon oxide is selectively deposited on the dielectric surface relative to the passivated metal surface.