首页>
外国专利>
IN-SITU TUNGSTEN DEPOSITION WITHOUT BARRIER LAYER
IN-SITU TUNGSTEN DEPOSITION WITHOUT BARRIER LAYER
展开▼
机译:原位钨沉积没有阻挡层
展开▼
页面导航
摘要
著录项
相似文献
摘要
In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments include forming an amorphous nucleation layer comprising at least one of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.
展开▼