MOSFET COMPONENT STRUCTURE WITH AIR GAPS IN THE SPACER AND EDUCATIONAL PROCEDURE OF THE SAME

摘要

A transistor device and manufacturing methods thereof are disclosed. The transistor device has one or more air gaps in one or more sidewall spacers. The one or more air gaps can be adjacent to the gate and / or above the source or drain region of the device. Different embodiments may have different combinations of air gaps formed in one or both of the side wall spacers. Different embodiments may have air gaps in one or both sidewall spacers adjacent to the gate and / or above the source or drain region of the device. The formation of the air gaps can reduce undesirable parasitic and / or fringing capacity.