首页> 外国专利> CLEANING COMPOSITION FOR POST-ETCH OR POST ASH RESIDUE REMOVAL FROM A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING MANUFACTURING PROCESS

CLEANING COMPOSITION FOR POST-ETCH OR POST ASH RESIDUE REMOVAL FROM A SEMICONDUCTOR SUBSTRATE AND CORRESPONDING MANUFACTURING PROCESS

机译:用于从半导体衬底和相应的制造过程中去除蚀刻或后灰分器残留物的清洁组合物

摘要

A cleaning composition for post-etch or post ash residue removal from a substrate used in semiconductor industry and a corresponding use of said cleaning composition is described. Further described is a process for the manufacture of a semiconductor device from a semiconductor substrate, comprising the step of post-etch or post ash residue removal from a substrate by contacting the substrate with a cleaning composition according to the invention.
机译:描述了用于从半导体工业中使用的基材和相应使用所述清洁组合物的储存后蚀刻或后灰分残留物的清洁组合物。 进一步描述的是从半导体衬底制造半导体器件的方法,包括通过根据本发明的清洁组合物接触基板的蚀刻后或从基板上除去灰分残余物的步骤。

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