SELECTION OF POST PLASMA ETCH/ASH CLEANING METHODS USING A RESIDUE REMOVAL MODEL FOR INTEGRATED CIRCUITS BASED ON RESIDUE ELEMENTAL COMPOSITION

摘要

A "Residue Removal Model" was developed to identify the best formulations for removing residues remaining on integrated circuits after plasma etch/ash processes. Auger Electron Spectroscopy (AES) coupled with metal and dielectric etch-rates determined for Al, Ti and SiO_2 led to a useful model. The model suggests that: 1) the composition of a cleaning formulation must be matched to the elemental composition of the residue, and 2) relatively high Al, Ti and SiO_2 etch-rates are required for successful residue removal, but must be balanced against underlying material etching. "Radar Plots" were used to compare various residue removal formulations.