首页> 外国专利> EUV EUV Apparatus and method for measuring phase of EUVExtreme Ultraviolet Mask and method for fabricating EUV mask comprising the method

EUV EUV Apparatus and method for measuring phase of EUVExtreme Ultraviolet Mask and method for fabricating EUV mask comprising the method

机译:EUV EUV装置和用于测量Euvextreme紫外线掩模相的方法及其制造包含该方法的EUV掩模的方法

摘要

The technical idea of the present invention is to provide an EUV mask phase measuring apparatus and method capable of accurately measuring the EUV mask phase, and an EUV mask manufacturing method including the same. The EUV mask phase measuring device includes: an EUV light source that generates and outputs EUV (Extreme Ultraviolet) light; at least one mirror reflecting the EUV light and making it incident on an EUV mask to be measured; a mask stage on which the EUV mask is disposed; a detector that receives the EUV light reflected from the EUV mask to obtain a 2D image, and measures reflectivity and diffraction efficiency of the EUV mask; and a processor configured to calculate the phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.
机译:本发明的技术概念是提供一种能够精确测量EUV掩模相位的EUV掩模相位测量装置和方法,以及包括该的EUV掩模制造方法。 EUV掩模相位测量装置包括:EUV光源,产生和输出EUV(极端紫外线)光; 至少一面反映EUV光并使其入射在待测EUV掩模上; 掩模阶段,欧盟掩模的掩模阶段; 一种检测器,其接收从EUV掩模反射的EUV光,以获得2D图像,并测量EUV面罩的反射率和衍射效率; 和处理器,配置为通过使用EUV掩模的反射率和衍射效率来计算EUV掩模的相位。

著录项

  • 公开/公告号KR20210117622A

    专利类型

  • 公开/公告日2021-09-29

    原文格式PDF

  • 申请/专利权人 삼성전자주식회사;

    申请/专利号KR20200034057

  • 发明设计人 박종주;이래원;한학승;김성수;

    申请日2020-03-19

  • 分类号G03F1/84;G03F1/22;G03F1/54;

  • 国家 KR

  • 入库时间 2024-06-14 22:08:26

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