1T1D DRAM DRAM 1T1D DRAM CELL AND ACCESS METHOD AND ASSOCIATED DEVICE FOR DRAM

摘要

The complementary metal-oxide-semiconductor (CMOS) process technology was started to be used to implement a static random-access memory (SRAM) having six transistors. Thereafter, the number of transistors is reduced in order to increase the integration density, but this may weaken the stability of the memory and increase the complexity of the access circuit, thus increasing the power consumption. In order to increase the integration density of the SRAM, a low power consumption memory and a corresponding circuit are designed according to the electrical characteristics of the reduced number of transistors, and then an access system is implemented. If the electrical characteristics of several other memories are similar to those of SRAM, such as Dynamic Random-Access Memory (DRAM), the corresponding access circuitry of the SRAM may be used.