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LED EMITTERS WITH INTEGRATED NANO-PHOTONIC STRUCTURES TO ENHANCE EQE
LED EMITTERS WITH INTEGRATED NANO-PHOTONIC STRUCTURES TO ENHANCE EQE
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机译:具有集成纳米光子结构的LED发射器,以增强EQE
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摘要
A device, system and method for producing enhanced external quantum efficiency (EQE) LED emission are disclosed. The device, system and method include a patterned layer configured to transform surface modes into directional radiation, a semiconductor layer formed as a III/V direct bandgap semiconductor to produce radiation, and a metal back reflector layer configured to reflect incident radiation. The patterned layer may be one-dimensional, two-dimensional or three-dimensional. The patterned layer may be submerged within the semiconductor layer or within the dielectric layer. The semiconductor layer is p-type gallium nitride (GaN). The patterned layer may be a hyperbolic metamaterials (HMM) layer and may include Photonic Hypercrystal (PhHc), or may be a low or high refractive index material or may be a metal.
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