HIGH-RELIABILITY GAN POWER TUBE FAST GATE DRIVE CIRCUIT

摘要

A high-reliability GaN power tube fast gate drive circuit, comprising: a control end of a drive current adjustment circuit (110) and an input end of a phase inverter (INV115) are connected to an input end of the gate drive circuit; the input end of the gate drive circuit is used for inputting a control signal On; an output end of the phase inverter (INV115) is connected to a control end of a first MOS switch (Q111) and an input end of a turn-off delay circuit (112); an output end of the turn-off delay circuit (112) is connected to a control end of a second MOS switch (Q113); the drive current adjustment circuit (110) outputs two current sources iCp and iDrv which are respectively connected to a node a and a node b at two ends of a charge pump capacitor (C120); the first MOS switch (Q111) has one switch end connected to the node a, and the other switch end connected to a reference ground; the second MOS switch (Q113) has one switch end connected to the node b, and the other switch end connected to the reference ground; the node b is used as an output end of the gate drive circuit. The working reliability of a GaN power tube can be improved.