Manufacturing method of SiC electronic device with reduced processing step and SiC electronic device

摘要

Problem to be solved: to provide an improved method for manufacturing an electronic device (50) based on SiC and an electronic device manufactured thereby.The method isPrepare substrate (53) of SiC;Forming a structural layer (52) of SiC on the front of the substrate;An active region having a role in generating and / or conducting current during the use period of the electronic device (50) is formed in the structural layer (52);A first electrical terminal (58) is formed on the structural layer (52);A titanium intermediate layer (72) is formed on the rear of the substrate;Heating the intermediate layer (72) by a laser beam (82) to generate local heating for the formation of an ohmic contact of titanium compounds;AndA second electrical terminal (57) of this electronic device is formed on the intermediate layerEach step is provided.Diagram