- TEST OPERATION FOR MEMORY DEVICE OPERATION METHOD OF TEST DEVICE TESTING MEMORY DEVICE AND MEMORY DEVICE WITH SELF-TEST FUNCTION

摘要

A test method for a memory device including a plurality of memory cells according to the present invention includes generating a first test pattern to be written in the plurality of memory cells, and writing a first pattern for writing the first test pattern into the plurality of memory cells performing the operation, reading first data from the plurality of memory cells in which the first test pattern is written, generating a second test pattern based on the first data, and applying the second test pattern to the plurality of memory cells and performing a second pattern writing operation for writing to . The second test pattern is generated so that, during the second pattern write operation, a write operation on defective cells in which a write failure occurs among the plurality of memory cells is omitted.