Atomic layer etching using boron containing gas and hydrogen fluoride gas

摘要

PROBLEM TO BE SOLVED: To provide the atomic layer etching using a boron-containing gas and a hydrogen fluoride gas.SOLUTION: Embodiments of the present invention provide a method for atomic layer etching (ALE) of a substrate. According to one embodiment, the method comprises the steps of: providing a substrate; and exposing the substrate to a hydrogen fluoride (HF) gas and a boron-containing gas to etch the substrate. According to another embodiment, the method comprises the steps of: providing a substrate including a metal oxide film; exposing the substrate to a HF gas to form a fluorinated surface layer on the metal oxide film; and exposing the substrate to a boron-containing gas to remove the fluorinated surface layer from the metal oxide film. To further etch the metal oxide film, the exposures may be repeated at least once.SELECTED DRAWING: Figure 1