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Method and system for realistic and efficient simulation of light emitting diodes having multi-quantum-wells
Method and system for realistic and efficient simulation of light emitting diodes having multi-quantum-wells
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机译:具有多量子阱的发光二极管的现实有效仿真的方法和系统
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摘要
The disclosure develops a multi-scale model that partitions the device into different spatial regions where the high carrier domains are treated as reservoirs in local equilibrium and serve as injectors and receptors of carriers into the neighboring reservoirs through tunneling and thermionic emission. The nonequilibrium Green's function (NEGF) formalism is used to compute the dynamics (states) and the kinetics (filling of states) in the entire extended complex device. The local density of states in the whole device is computed quantum mechanically within a multi-band tight binding Hamiltonian. The model results agree with experimental I-V curves quantitatively.
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