INTEGRATED HIGH SIDE GATE DRIVER STRUCTURE AND CIRCUIT FOR DRIVING HIGH SIDE POWER TRANSISTORS

摘要

The present invention relates to an integrated high side gate driver structure for driving a power transistor. The high side gate driver structure 411 includes a semiconductor substrate comprising a first polarity semiconductor material on which first well diffusions 426 , 430 comprising a second polarity semiconductor material are formed. A peripheral outer wall 430 of the first well diffusion is adjacent the semiconductor substrate. A second well diffusion 427 , 429 comprising a first polarity semiconductor material is formed such that an outer peripheral wall 429 of the second well diffusion is adjacent to an inner peripheral wall 430 of the first well diffusion. arranged inside the diffuser. The integrated high side gate driver structure further includes a gate driver comprising a high side positive supply voltage port, a high side negative supply voltage port, a driver input and a driver output, wherein the gate driver includes a control terminal of the transistor driver and a transistor driver. a transistor driver arranged in the second well diffusion 429 such that an output terminal of the , respectively, is coupled to a driver input and a driver output; The integrated high side gate driver structure also includes a first electrical connection between the first well diffusion and the high side negative supply voltage port and a second electrical connection between the second well diffusion and the high side negative supply voltage port. .