Substrate processing apparatus material layer deposition apparatus and apparatus for atmospheric pressure chemical vapor deposition

摘要

a reaction chamber having an inlet through which a reaction gas is supplied and an outlet through which the residual gas is discharged; a plurality of ionizers disposed at the front end of the inlet and configured to ionize the reactant gas supplied to the inlet; and a heater configured to heat the reaction chamber, the plurality of ionizers comprising: a first ionizer configured to positively ionize the reaction gas; and a second ionizer configured to negatively ionize the reaction gas.