MEMORY DEVICE FOR SUPPORTING NEW COMMAND INPUT SCHEME AND OPERATING METHOD THEREOF

摘要

According to an embodiment of the present invention, the method of operating a memory device including row pins for receiving a row command and column pins for receiving a column command different from the row command is provided through row pins during 1.5-cycles of a clock signal. Receiving a first active command corresponding to a specific memory bank, after receiving the first active command, a first read command or a first write command corresponding to the specific memory bank through column pins during 1-cycle of the clock signal After receiving the first read command or the first write command, a first precharge command corresponding to a specific memory bank is applied through the row pins during 0.5-cycles of the clock signal corresponding to the rising edge of the clock signal. receiving, after receiving the first precharge command, receiving a second active command corresponding to a specific memory bank through row pins during 1.5-cycles of the clock signal, after receiving the second active command, the clock signal Receiving a second read command or a second write command corresponding to a specific memory bank through column pins during one-cycle of the signal, and after receiving the second read command or the second write command, a falling edge of the clock signal and receiving a second precharge command corresponding to the specific memory bank through the row pins during 0.5-cycle of the clock signal corresponding to .