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SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

机译：半导体器件的半导体器件及其制造方法

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摘要

A semiconductor device which comprises: a semiconductor film that contains a Schottky junction region and an ohmic junction region; a Schottky electrode that is arranged on the Schottky junction region of the semiconductor film; and an ohmic electrode that is arranged on the ohmic junction region. This semiconductor device is characterized in that the dislocation density of the Schottky junction region of the semiconductor film is lower than the dislocation density of the ohmic junction region of the semiconductor film.

机译：一种半导体器件，包括：包含肖特基接合区域和欧姆接线区域的半导体膜;布置在半导体膜的肖特基接合区域上的肖特基电极;和布置在欧姆接线区域上的欧姆电极。该半导体器件的特征在于半导体膜的肖特基接合区域的位错密度低于半导体膜的欧姆接合区域的位错密度。

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公开/公告号WO2021153609A1

专利类型
公开/公告日2021-08-05

原文格式PDF
申请/专利权人 FLOSFIA INC.;
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申请/专利号WO2021JP02822
发明设计人 OSHIMA TAKAYOSHI;
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申请日2021-01-27
分类号C30B25/04;H01L21/365;H01L21/368;H01L29/24;H01L29/78;H01L29/12;H01L29/739;H01L21/336;H01L29/872;H01L21/329;C30B29/16;C23C16/04;C23C16/40;
国家 JP
入库时间 2022-08-24 20:23:00

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