Silicon carbide power modules

摘要

Problem to be solved: to provide a power module including silicon carbide switching semiconductor components with improved robustness and reliability.The power module includes a number of semiconductor dies 16 coupled between a first terminal, a second terminal, and a first terminal and a second terminal.Semiconductor die 16 forms a low resistance path for current flow from the first terminal to the second terminal during the forward conduction mode of operation, and forms a high resistance path for current flow from the first terminal to the second terminal during forward blocking configuration.Improvements made to the power module can pass temperature, humidity, and bias tests at least 80 hours at 80% of the rated voltage of the power module.Diagram