首页> 外国专利> SnTiO3 MATERIAL, METHOD OF PREPARATION THEREOF, USE THEREOF AS FERROELECTRIC MATERIAL AND DEVICE COMPRISING A FERROELECTRIC MATERIAL

SnTiO3 MATERIAL, METHOD OF PREPARATION THEREOF, USE THEREOF AS FERROELECTRIC MATERIAL AND DEVICE COMPRISING A FERROELECTRIC MATERIAL

机译:SnTiO3材料,其制备方法,其用途作为铁电材料和包括铁电材料的装置

摘要

The present invention relates to a material of the formula SnTiO3 having a crystal structure comprised of layers, wherein the layers comprise Sn(II) ions, Ti(IV) ions and edge-sharing O6-octahedra, the edge-sharing O6-octahedra form a sub-layer, the Ti(IV) ions are located within ⅔ of the edge-sharing O6-octahedra, thus forming edge-sharing TiO6-octahedra, the edge-sharing TiO6-octahedra form a honeycomb structure within the sub-layer, the honeycomb structure comprising hexagons with Ti(IV)-vacancies within the hexagons, the Sn(II) ions are located above and below the Ti(IV)-vacancies with respect to the sub-layer, the Ti(IV) ions are optionally substituted with M, M is one or more elements selected from Group 4 and Group 14 elements, and the crystal structure satisfies at least one of the following features (i) and (ii): (i) the Sn(II) ions have a tetrahedral coordination sphere involving three O ions of the layer and the electron lone pair of the Sn(II) ions which is situated at an apical position relative to the three O ions of the layer, (ii) the layers are stacked so that each layer is translated relative to each adjacent layer by a stacking vector S1 or a stacking vector S2, the centers of adjacent hexagons form a parallelogram with a side having a length x and side having a length y, the stacking vector S1 is a combined translation along the side having the length x by ⅔ x and along the side having a lengthy by ⅓ y, the stacking vector S2 is a combined translation along the side having the length x by ⅓ x and along the side having a lengthy by ⅔ y, and the crystal structure comprises layers translated relative to adjacent layers by the stacking vector 1 and layers translated relative to adjacent layers by the stacking vector S2. The present invention is further directed to a material of the formula SnTiO3 having a tetragonal perovskite-type crystal structure, a method for the preparation of SnTiO3, a device comprising a ferroelectric material and a use of the material of the formula SnTiO3 in a ferroelectric element.
机译:本发明涉及具有由层组成的晶体结构的式SnTiO 3 的材料,其中所述层包括Sn(II)离子,Ti(IV)离子和边缘共享O 6 -octahedra,边缘共享O 6 -octahedra形成子层,Ti(iv)离子位于边缘共享O 6 < /亚> -octahedra,因此形成边缘共享TiO 6 -octahedra,边缘共享TiO 6 -octahedra在子层内形成蜂窝结构,蜂窝体包含六边形(IV) - 六边形内的六边形的结构,Sn(II)离子位于Ti(IV)相对于子层上方,Ti(IV)离子是任选被取代的M,M是选自组4和组14元件的一个或多个元素,并且晶体结构满足以下特征(i)和(ii)中的至少一种:(i)Sn(ii)离子具有四面体配位球体涉及层和T的三个OION HE电子孤立的SN(II)离子的SN(II)离子相对于层的顶端位置,(II)层被堆叠,使得通过堆叠载体相对于每个相邻层平移每个层S 1 或堆叠矢量S 2 ,相邻六边形的中心形成平行四边形,侧面具有长度Y的长度x和侧,堆叠载体s < b> 1 是沿着长度x的侧的组合的翻译,并且沿着宽度×y的侧侧,堆叠载体s 2 沿着侧面具有⅓x的长度x和沿着纵向⅔y的侧面,并且晶体结构包括通过堆叠载体 1 和相对于相邻层的层相对于相邻层平移的层堆叠矢量S 2 。本发明进一步涉及具有四边形钙钛矿型晶体结构的式SnTiO 3 的材料,用于制备SNTIO 3 的方法,该装置包括a铁电材料和式Sntio 3 在铁电元件中的用途。

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