首页> 外国专利> SnTiO3 MATERIAL, METHOD OF PREPARATION THEREOF, USE THEREOF AS FERROELECTRIC MATERIAL AND DEVICE COMPRISING A FERROELECTRIC MATERIAL

SnTiO3 MATERIAL, METHOD OF PREPARATION THEREOF, USE THEREOF AS FERROELECTRIC MATERIAL AND DEVICE COMPRISING A FERROELECTRIC MATERIAL

机译:SnTiO 3 材料,其制备方法,将其用作铁电材料和包含铁电材料的装置

摘要

The present invention relates to a material of the formula SnTiO3 having a crystal structure comprised of layers, wherein the layers comprise Sn(II) ions, Ti(IV) ions and edge-sharing O6-octahedra, the edge-sharing O6-octahedra form a sub-layer, the Ti(IV) ions are located within 2/3 of the edge-sharing O6-octahedra, thus forming edge-sharing TiO6-octahedra, the edge-sharing TiO6-octahedra form a honeycomb structure within the sub-layer, the honeycomb structure comprising hexagons with Ti(IV)-vacancies within the hexagons, the Sn(II) ions are located above and below the Ti(IV)-vacancies with respect to the sub-layer, the Ti(IV) ions are optionally substituted with M, M is one or more elements selected from Group 4 and Group 14 elements, and the crystal structure satisfies at least one of the following features (i) and (ii): (i) the Sn(II) ions have a tetrahedral coordination sphere involving three O ions of the layer and the electron lone pair of the Sn(II) ions which is situated at an apical position relative to the three O ions of the layer, (ii) the layers are stacked so that each layer is translated relative to each adjacent layer by a stacking vector S1 or a stacking vector S2, the centers of adjacent hexagons form a parallelogram with a side having a length x and side having a length y, the stacking vector S1 is a combined translation along the side having the length x by 2/3 x and along the side having a length y by 1/3 y, the stacking vector S2 is a combined translation along the side having the length x by 1/3 x and along the side having a length y by 2/3 y, and the crystal structure comprises layers translated relative to adjacent layers by the stacking vector S1 and layers translated relative to adjacent layers by the stacking vector S2. The present invention is further directed to a material of the formula SnTiO3 having a tetragonal perovskite-type crystal structure, a method for the preparation of SnTiO3, a device comprising a ferroelectric material and a use of the material of the formula SnTiO3 in a ferroelectric element.
机译:本发明涉及具有由层组成的晶体结构的式SnTiO 3 的材料,其中所述层包含Sn(II)离子,Ti(IV)离子和边缘共享的O 6 -八面体,边共享的O 6 -八面体形成一个子层,Ti(IV)离子位于O 边共享的2/3内6 -八面体,从而形成边缘共享的TiO 6 -八面体,边缘TiO 6 -八面体在子层内形成蜂窝结构,在包含六边形内具有Ti(IV)空位的六边形的蜂窝结构中,Sn(II)离子相对于子层位于Ti(IV)空位的上方和下方,Ti(IV)离子是可选的用M取代,M是选自第4族和第14族元素的一种或多种元素,并且晶体结构满足以下特征(i)和(ii)中的至少一个:(i)Sn(II)离子具有涉及层中三个O离子的四面体配位球和相对于该层的三个O离子位于顶端位置的Sn(II)离子的电子孤对,(ii)堆叠这些层,以使每个层通过堆叠矢量相对于每个相邻层平移S1或堆叠向量S2,相邻六边形的中心形成平行四边形,其边长为x,边长为y,堆叠矢量S1是沿边长x的2/3 x的组合平移,并且沿着长度y乘以1/3 y的边,堆叠向量S2是沿着长度x乘以1/3 x的边和长度y乘以2/3 y的边以及晶体的组合平移该结构包括通过堆叠矢量S1相对于相邻层平移的层和通过堆叠矢量S2相对于相邻层平移的层。本发明进一步涉及具有四方钙钛矿型晶体结构的式SnTiO 3 的材料,SnTiO 3 的制备方法,包括铁电材料以及式SnTiO 3 的材料在铁电元件中的用途。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号