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Vanadium silicon nitride film, member coated with vanadium silicon nitride film and method for manufacturing the same

机译:钒氮化硅膜,涂有钒氮化硅膜的构件及其制造方法

摘要

A vanadium silicon nitride film formed as a hard film to a base material satisfies 0.30≤a/b≤1.7 and 0.24≤b≤0.36 when a=vanadium element concentration [at %]/(vanadium element concentration [at %]+silicon element concentration [at %]+nitrogen element concentration [at %]) and b=silicon element concentration [at %]/(vanadium element concentration [at %]+silicon element concentration [at %]+nitrogen element concentration [at %]), and has a hardness of 2300 HV or more.
机译:当A =钒元素浓度[AT%] /(钒元素浓度[At%] +硅元件+硅元件时,形成为基材的硬膜含有硬膜的钒氮化硅膜满足0.30≤A/b≤1.7和0.24≤b≤0.36浓度[0%] +氮素元素浓度[AT%])和B =硅元素浓度[At%] /(钒元素浓度[At%] +硅元素浓度[At%] +氮素元素浓度[At%]) ,并且具有2300个或更多的硬度。

著录项

  • 公开/公告号US11072857B2

    专利类型

  • 公开/公告日2021-07-27

    原文格式PDF

  • 申请/专利权人 DOWA THERMOTECH CO. LTD.;

    申请/专利号US201716465755

  • 申请日2017-12-28

  • 分类号C23C16/34;C23C16/513;C04B35/58;C03C17/22;B21D37/20;B21J13/02;

  • 国家 US

  • 入库时间 2022-08-24 20:11:16

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