Reversing a potential polarity for reading out phase change cells in order to shorten a recovery delay after programming

摘要

A memory system comprising: memory cells commonly connected to a programming line in a column of a memory matrix, each memory cell having a selection device and a memory device connected in series with each other, the selection devices each having a line terminal connected in common to a read line , whereinthe read line is configured to receive a first voltage potential during a read process of a selected memory cell; the programming line is configured to receive a ground potential during the read process of the selected memory cell; the read line is configured to receive the ground potential during a programming process of a selected memory cell and the Programming line is set up to receive a second voltage potential during the programming process of the selected memory cell, the memory system being designed following the application en of the second voltage potential on the programming line to receive the first voltage potential on the read line in order to reduce a recovery time by providing a reverse current flow in the selection device after the programming.