Method for producing an autarkic semiconductor component or an autarkic bipolar transistor with an insulated gate electrode, bipolar transistor with an insulated gate electrode

摘要

A method is disclosed for producing an autarkic semiconductor component or an autarkic bipolar transistor with an insulated gate electrode (BT), with the following steps: - providing an electrical connection frame (AR) with a first contact surface (KF1); - arranging a silicon bare chip (NC) on the lead frame (AR), the silicon bare chip (NC) being placed on the first contact surface (KF1) and physically and electrically connected to the lead frame (AR); - After the silicon bare chip (NC) has been arranged on the Lead frame (AR): Formation of an electrical contact layer (KS) on a second contact surface (KF2) of the silicon bare chip (NC) facing away from the lead frame (AR). Furthermore, a bipolar transistor with an insulated gate electrode (BT) is provided.