MEMORY SYSTEM HAVING COMBINED HIGH DENSITY LOW BANDWIDTH AND LOW DENSITY HIGH BANDWIDTH MEMORIES

摘要

In one embodiment, the memory system may include at least two types of DRAM that differ in at least one characteristic. For example, one DRAM type may be a high density DRAM, while the other DRAM type may have a lower density than the first DRAM type, but may also have lower latency and higher bandwidth. The first type of DRAM may be on one or more first integrated circuits and the second type of DRAM may be on one or more second integrated circuits. In one embodiment, the first and second integrated circuits may be coupled together in a stack. The second integrated circuit may include a physical layer circuit for coupling to other circuitry (eg, an integrated circuit having a memory controller such as a system on a chip (SOC)), the physical layer circuitry being the DRAM in the first integrated circuit can be shared by