首页> 外国专利> Memory System Having Combined High Density, Low Bandwidth and Low Density, High Bandwidth Memories

Memory System Having Combined High Density, Low Bandwidth and Low Density, High Bandwidth Memories

机译:内存系统具有综合高密度,带宽低,密度低,带宽度回忆高

摘要

In an embodiment, a memory system may include at least two types of DRAM, which differ in at least one characteristic. For example, one DRAM type may be a high density DRAM, while another DRAM type may have lower density but may also have lower latency and higher bandwidth than the first DRAM type. DRAM of the first type may be on one or more first integrated circuits and DRAM of the second type may be on one or more second integrated circuits. In an embodiment, the first and second integrated circuits may be coupled together in a stack. The second integrated circuit may include a physical layer circuit to couple to other circuitry (e.g. an integrated circuit having a memory controller, such as a system on a chip (SOC)), and the physical layer circuit may be shared by the DRAM in the first integrated circuits.
机译:在一个实施例中,存储器系统可以包括至少两种类型的DRAM,其在至少一个特征中不同。例如,一个DRAM类型可以是高密度DRAM,而另一个DRAM类型可能具有较低的密度,但也可以具有比第一DRAM类型更低的延迟和更高的带宽。第一类型的DRAM可以位于一个或多个第一集成电路中,第二类型的DRAM可以位于一个或多个第二集成电路上。在一个实施例中,第一和第二集成电路可以在堆叠中耦合在一起。第二集成电路可以包括物理层电路,以耦合到其他电路(例如,集成电路具有存储器控制器,例如芯片(SOC)上的系统),并且物理层电路可以由DRAM共享第一集成电路。

著录项

  • 公开/公告号US2021125657A1

    专利类型

  • 公开/公告日2021-04-29

    原文格式PDF

  • 申请/专利权人 APPLE INC.;

    申请/专利号US202117140753

  • 发明设计人 SUKALPA BISWAS;FARID NEMATI;

    申请日2021-01-04

  • 分类号G11C11/402;G11C5/06;H01L23;G11C5/04;H01L25/10;H01L25/065;G11C5/02;G11C7/02;G11C11/406;

  • 国家 US

  • 入库时间 2022-08-24 18:25:32

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号