Optoelectronic devices based on intrinsic plasmon-exciton polaritons

摘要

A semiconductor device includes a ribbon of a thickness and a width. A material of the ribbon is configured to host excitons as well as plasmons, and the width is an inverse function of a wavector value at which an energy level of plasmons in the material substantially equals an energy level of excitons in the material. The substantially equal energies of the plasmons and the excitons in the ribbon cause an excitation of intrinsic plasmon-exciton polaritons (IPEPs) in the ribbon. A first contact electrically couples to a first location on the ribbon, and a second contact electrically couples to a second location on the ribbon.