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Method and Device for Boosting Performance of FinFETS via Strained Spacer
Method and Device for Boosting Performance of FinFETS via Strained Spacer
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机译:通过应变间隔物提高FinFET性能的方法和装置
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摘要
A semiconductor device and a method of forming the same are provided. A semiconductor device according to an embodiment includes a P-type field effect transistor (PFET) and an N-type field effect transistor (NFET). The PFET includes a first gate structure formed over a substrate, a first spacer disposed on a sidewall of the first gate structure, and an unstrained spacer disposed on a sidewall of the first spacer. The NET includes a second gate structure formed over the substrate, the first spacer disposed on a sidewall of the second gate structure, and a strained spacer disposed on a sidewall of the first spacer.
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