GaN-BASED SEMICONDUCTOR NEUTRON DETECTOR AND SYSTEM FOR NEUTRON DETECTING USING THE SAME

摘要

The present invention provides an n-type-intrinsic-p-type gallium nitride-based semiconductor layer sequentially formed on a first electrode layer; and a second electrode layer formed on the p-type gallium nitride-based semiconductor layer, wherein the p-type gallium nitride-based semiconductor layer is doped with chlorine, and to a neutron detection system using the same.