Gate drive control system for SiC and IGBT power devices for controlling unsaturated or short circuit faults

摘要

Problem to be solved: to provide a gate drive control device for a semiconductor device capable of suppressing switching spikes and ringing at high speed switching.The gate drive controller of the SiC FET 408 includes a MCU 402 and a comparator 406 comparing the output signal of the FET to a reference value generated by the MCU.The MCU generates a first intermediate drive signal for the FET in response to the turn off trigger signal and generates a second intermediate drive signal different from the first drive signal when the comparator output signal indicates that the FET is experiencing non-saturation.When the output signal of the comparator indicates that the output signal of the FET has changed relative to the reference value, the MCU generates the final drive signal of the FET.The MCU also includes a timer that changes the drive signal at a predetermined interval when the comparator does not change.Diagram