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Extreme ultraviolet (EUV) mask for lithography and associated methods
Extreme ultraviolet (EUV) mask for lithography and associated methods
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机译:光刻和相关方法的极端紫外(EUV)掩模
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摘要
A method of manufacturing an extreme ultraviolet (EUV) mask, for use in an EUV exposure process, on a mask substrate includes constructing a first monitoring macro considering an effect caused by a slit used in the EUV exposure process, performing an optical proximity correction (OPC) using a plurality of second monitoring macros, wherein each of the plurality of second monitoring macros is substantially identical to the first monitoring macro, inputting mask tape-out (MTO) design data acquired through the OPC, preparing mask data including at least one of data format conversion, mask process correction (MPC), and job-deck for the MTO design data, and performing EUV exposure (writing) on the mask substrate based on the mask data.
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