Structural enhancement of Cu nanowires

摘要

A structure comprising a first dielectric layer embedded with a first interconnect structure. An insulator layer is disposed on the first dielectric layer. A second dielectric layer is disposed on the insulator layer. A via resides within the second dielectric layer. A second interconnect structure is isolated from the first dielectric layer. A first portion of a bottom surface of the via resides on a top surface of the insulator layer. A second portion of the bottom surface of the via resides on a first portion of a top surface of the first interconnect structure.