PROCESS FOR MANUFACTURING A RELAXED GAN / INGAN STRUCTURE

摘要

Method comprising the following steps: a) providing a device comprising: - a GaN / InGaN structure comprising an electrically conductive layer of doped GaN (204) locally covered by InGaN mesas (100) comprising a layer of doped InGaN (101) ) and an undoped or lightly doped InGaN layer (102), - an electrically insulating layer (300) covering the electrically conductive layer in doped GaN (204) between the mesas (100), b) connecting the electrically conductive layer in GaN doped (204) and a counter electrode (500) to a voltage or current generator, c) immerse the device and the counter electrode (500) in an electrolytic solution, d) apply a voltage or a current between the doped GaN electrically conductive layer (204) and the second electrode (500) for porosifying the doped InGaN layer (101), e) forming an InGaN layer by epitaxy on the InGaN mesas (100), whereby a relaxed epitaxial InGaN layer is obtained. Figure for the abstract: 4