PROCESS FOR MANUFACTURING A SUBSTRATE INCLUDING A RELAXED INGAN LAYER

摘要

Process for manufacturing a substrate comprising the following steps: - providing a stack comprising an initial substrate, a GaN layer, a doped InGaN layer (13) and an unintentionally doped InGaN layer (14), - transfer the layer InGaN doped (13) and the layer of InGaN not intentionally doped (14) on an anodization support (21), so as to form a second stack (20), - immerse the second stack (20) and counter electrode in an electrolytic solution, and apply a voltage or current between the doped InGaN layer (13) and a counter electrode, to porosify the doped InGaN layer (13), and relax the InGaN layer unintentionally doped (14), - transfer the doped InGaN layer (13) and the unintentionally doped InGaN layer (14) on a support of interest, - form an InGaN layer by epitaxy on the d layer Unintentionally doped InGaN, whereby a relaxed epitaxial InGaN layer is obtained. Figure for the abstract: 1B