[Problem] The present invention provides a method of manufacturing a resist pattern of effectively below the resolution limit, which is suitable for use in the liquid crystal display device manufacturing field. In particular, the present invention provides a method of accurately manufacturing a high-defined pattern of below the resolution limit while maintaining or improving a pattern shape having a taper shape. [Means for Solution]A method of manufacturing a high-defined pattern comprising the following steps of: coating a resist composition comprising a novolak resin having an alkali dissolution rate of 100-3,000 Å on a substrate to form a resist composition layer; subjecting said resist composition layer to exposure; developing said resist composition layer to form a resist pattern; heating said resist pattern; subjecting said resist pattern to flood exposure; coating a fine pattern forming composition on the surface of said resist pattern to form a fine pattern forming composition layer; heating said resist pattern and said fine pattern forming composition layer to cure the regions of said fine pattern forming composition layer in the vicinity of said resist pattern and to form an insolubilized layer; removing uncured regions of said fine pattern forming composition layer to form a fine pattern; and heating said fine pattern.
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