A MAGNETIC RANDOM ACCESS MEMORY STORAGE ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

摘要

The invention discloses a magnetic random access memory (MRAM) storage element and a magnetic random access memory. The MRAM storage element has a stack structure formed by subsequently stacking a reference layer, a tunnel barrier layer, a first free layer, a perpendicular magnetic coupling layer, a second free layer, and a magnetic damping barrier layer. The magnetization vector in the second free layer is perpendicular to the film surface, and is parallel to the magnetization in the first free layer through parallel magnetic coupling to the first free layer. The perpendicular magnetic coupling layer is used to achieve a strong magnetic coupling between the first free layer and the second free layer and to provide additional interface perpendicular magnetic anisotropies for both the first free layer and the second free layer. The magnetic damping barrier layer provides additional interface perpendicular magnetic anisotropy to the second free layer and reduces the magnetic damping coefficient of the second free layer. The addition of the second free layer in the invention increases the total thickness of the free layer, reduces the magnetic damping coefficient and increases the thermal stability factor, while the critical write current does not increase and the tunneling magnetoresistance is not affected.