HALF-TIME RELATIONSHIP AND HALF-TIME PREPARATION

摘要

The capacity of an MOS capacitor is increased. This semiconductor element includes a first semiconductor range, an insulation film, a gate electrode and a second semiconductor range. The first semiconductor area is positioned on a semiconductor substrate and has a depth on the surface. The insulation film is positioned adjacent to the surface of the first semiconductor range. The gate electrode is adjacent to the insulationMovim is positioned and an MOS capacitor is formed between the gate electrode and the first semiconductor range. The second semiconductor range is positioned adjacent to the first semiconductor range in the semiconductor substrate and is configured with the same type of electrical conductivity as the first semiconductor rangewhere the second semiconductor range delivers to the first semiconductor range during loading and unloading of the MOS capacitor.